SI2301 - P-Channel MOSFET 2.8A SOT23 (25 Pack)
The A1SHB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching applications.
Quick Spec
- Maximum Power Dissipation (PD): 1.25W
- Maximum Drain-Source Voltage (VDS): 20V
- Maximum Gate-Source Voltage (Vgs): 8V
- Maximum Gate-Threshold Voltage (VGS - TH): 0.45V
- Maximum Drain Current (ID): 2.2A
- Maximum Junction Temperature (Tj): 150°C
- Rise Time (tr): 36 nS
- Drain-Source Capacitance (Cd): 223 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
- Surface Mount Package: SOT23
Pinout
Resources
Shipping List
- 25 X SI2301 - P-Channel MOSFET 2.8A SOT23
SI2301 - P-Channel MOSFET 2.8A SOT23 (25 Pack)
- Brand: Generic
- Product Code: A1SHB
- Weight: 0.001kg
- Product Status : Active
Stock
| Warehouse | Stock Status | Location |
|---|---|---|
| Centurion | In Stock | W009 |
| Stellenbosch | In Stock | Y0019 |
We ship free of charge between branches to complete your order.
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R18.00 (Inc Tax: R20.70)
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Tags: sl2301, p-channel, mosfet, 2.8a, sot, trench, gate, mos, a1shb