The A1SHB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching applications.
Maximum Power Dissipation (PD): 1.25W
Maximum Drain-Source Voltage (VDS): 20V
Maximum Gate-Source Voltage (Vgs): 8V
Maximum Gate-Threshold Voltage (VGS - TH): 0.45V
Maximum Drain Current (ID): 2.2A
Maximum Junction Temperature (Tj): 150°C
Rise Time (tr): 36 nS
Drain-Source Capacitance (Cd): 223 pF
Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
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